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Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO2/Al2O3-Based Charge Trapping Layers.
Materials (Basel). 2022 Sep 9;15(18):6285. doi: 10.3390/ma15186285.
Materials (Basel). 2022.
PMID: 36143596
Free PMC article.
Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics.
Spassov D, Paskaleva A, Guziewicz E, Davidović V, Stanković S, Djorić-Veljković S, Ivanov T, Stanchev T, Stojadinović N.
Spassov D, et al. Among authors: stanchev t.
Materials (Basel). 2021 Feb 10;14(4):849. doi: 10.3390/ma14040849.
Materials (Basel). 2021.
PMID: 33578892
Free PMC article.
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