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Page 1
Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes.
Materials (Basel). 2023 Mar 9;16(6):2202. doi: 10.3390/ma16062202.
Materials (Basel). 2023.
PMID: 36984081
Free PMC article.
Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes.
Knezevic T, Jelavić E, Yamazaki Y, Ohshima T, Makino T, Capan I.
Knezevic T, et al.
Materials (Basel). 2023 Apr 25;16(9):3347. doi: 10.3390/ma16093347.
Materials (Basel). 2023.
PMID: 37176229
Free PMC article.
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On the Many Applications of Nanometer-Thin Pure Boron Layers in IC and Microelectromechanical Systems Technology.
Nanver LK, Knezevic T, Liu X, Thammaiah SD, Krakers M.
Nanver LK, et al. Among authors: knezevic t.
J Nanosci Nanotechnol. 2021 Apr 1;21(4):2472-2482. doi: 10.1166/jnn.2021.19112.
J Nanosci Nanotechnol. 2021.
PMID: 33500065
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