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Year | Number of Results |
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2018 | 3 |
2019 | 1 |
2024 | 1 |
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Page 1
Spin-State Control of Shallow Single NV Centers in Hydrogen-Terminated Diamond.
ACS Appl Mater Interfaces. 2024 Mar 13;16(10):13212-13218. doi: 10.1021/acsami.3c17544. Epub 2024 Mar 1.
ACS Appl Mater Interfaces. 2024.
PMID: 38426213
Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure.
Kageura T, Hideko M, Tsuyuzaki I, Morishita A, Kawano A, Sasama Y, Yamaguchi T, Takano Y, Tachiki M, Ooi S, Hirata K, Arisawa S, Kawarada H.
Kageura T, et al.
Sci Rep. 2019 Oct 23;9(1):15214. doi: 10.1038/s41598-019-51596-w.
Sci Rep. 2019.
PMID: 31645621
Free PMC article.
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Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures.
Takahide Y, Sasama Y, Takeya H, Takano Y, Kageura T, Kawarada H.
Takahide Y, et al. Among authors: kageura t.
Rev Sci Instrum. 2018 Oct;89(10):103903. doi: 10.1063/1.5041936.
Rev Sci Instrum. 2018.
PMID: 30399867
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Role of Carboxyl and Amine Termination on a Boron-Doped Diamond Solution Gate Field Effect Transistor (SGFET) for pH Sensing.
Falina S, Kawai S, Oi N, Yamano H, Kageura T, Suaebah E, Inaba M, Shintani Y, Syamsul M, Kawarada H.
Falina S, et al. Among authors: kageura t.
Sensors (Basel). 2018 Jul 6;18(7):2178. doi: 10.3390/s18072178.
Sensors (Basel). 2018.
PMID: 29986461
Free PMC article.
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Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors.
Oi N, Inaba M, Okubo S, Tsuyuzaki I, Kageura T, Onoda S, Hiraiwa A, Kawarada H.
Oi N, et al. Among authors: kageura t.
Sci Rep. 2018 Jul 13;8(1):10660. doi: 10.1038/s41598-018-28837-5.
Sci Rep. 2018.
PMID: 30006560
Free PMC article.
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