Charge Transport inside TiO2 Memristors Prepared via FEBID

Markus Baranowski; Roland Sachser; Bratislav P Marinković; Stefan Dj Ivanović; Michael Huth

doi:10.3390/nano12234145

Charge Transport inside TiO₂ Memristors Prepared via FEBID

Nanomaterials (Basel). 2022 Nov 23;12(23):4145. doi: 10.3390/nano12234145.

Authors

Markus Baranowski¹, Roland Sachser¹, Bratislav P Marinković², Stefan Dj Ivanović², Michael Huth¹

Affiliations

¹ Physikalisches Institut, Goethe University, 60438 Frankfurt am Main, Germany.
² Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia.

Abstract

We fabricated memristive devices using focused electron beam-induced deposition (FEBID) as a direct-writing technique employing a Pt/TiO₂/Pt sandwich layer device configuration. Pinching in the measured current-voltage characteristics (i-v), the characteristic fingerprint of memristive behavior was clearly observed. The temperature dependence was measured for both high and low resistive states in the range from 290 K down to about 2 K, showing a stretched exponential behavior characteristic of Mott-type variable-range hopping. From this observation, a valence change mechanism of the charge transport inside the TiO₂ layer can be deduced.

Keywords: FEBID; Mott-type variable-range hopping; SEM image; current-voltage (i-v) curves; memristor; resistive switching; temperature dependence measurements; titanium dioxide.

Grants and funding

We want to thank the Deutscher Akademischer Austauschdienst (DAAD) and the Republic of Serbia, project #451-03-01766/2014-09/12: “Identifying superior precursor molecules for focused electron beam induced deposition (FEBID)” for their financial support enabling the exchange of personnel.