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Nanoporous GaN onp-type GaN: a Mg out-diffusion compensation layer for heavily Mg-dopedp-type GaN.
Nanotechnology. 2022 Oct 4;33(50). doi: 10.1088/1361-6528/ac91d7.
Nanotechnology. 2022.
PMID: 36103775
Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling.
Malakoutian M, Field DE, Hines NJ, Pasayat S, Graham S, Kuball M, Chowdhury S.
Malakoutian M, et al. Among authors: chowdhury s.
ACS Appl Mater Interfaces. 2021 Dec 22;13(50):60553-60560. doi: 10.1021/acsami.1c13833. Epub 2021 Dec 7.
ACS Appl Mater Interfaces. 2021.
PMID: 34875169
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