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Year | Number of Results |
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2013 | 2 |
2017 | 1 |
2018 | 1 |
2020 | 3 |
2024 | 0 |
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Page 1
Operation Mechanism of a MoS₂/BP Heterojunction FET.
Nanomaterials (Basel). 2018 Oct 7;8(10):797. doi: 10.3390/nano8100797.
Nanomaterials (Basel). 2018.
PMID: 30301261
Free PMC article.
Wafer-Scale Integration of Highly Uniform and Scalable MoS2 Transistors.
Kim Y, Kim AR, Zhao G, Choi SY, Kang SC, Lim SK, Lee KE, Park J, Lee BH, Hahm MG, Kim DH, Yun J, Lee KH, Cho B.
Kim Y, et al. Among authors: kang sc.
ACS Appl Mater Interfaces. 2017 Oct 25;9(42):37146-37153. doi: 10.1021/acsami.7b10676. Epub 2017 Oct 16.
ACS Appl Mater Interfaces. 2017.
PMID: 28976735
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Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer.
Chang SJ, Kim DS, Kim TW, Lee JH, Bae Y, Jung HW, Kang SC, Kim H, Noh YS, Lee SH, Kim SI, Ahn HK, Lim JW.
Chang SJ, et al. Among authors: kang sc.
Nanomaterials (Basel). 2020 Oct 30;10(11):2175. doi: 10.3390/nano10112175.
Nanomaterials (Basel). 2020.
PMID: 33143313
Free PMC article.
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Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors.
Kang SC, Kim SY, Lee SK, Kim K, Allouche B, Hwang HJ, Lee BH.
Kang SC, et al.
Nanomaterials (Basel). 2020 Jun 18;10(6):1186. doi: 10.3390/nano10061186.
Nanomaterials (Basel). 2020.
PMID: 32570877
Free PMC article.
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Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors.
Kang SC, Jung HW, Chang SJ, Kim SM, Lee SK, Lee BH, Kim H, Noh YS, Lee SH, Kim SI, Ahn HK, Lim JW.
Kang SC, et al.
Nanomaterials (Basel). 2020 Oct 24;10(11):2116. doi: 10.3390/nano10112116.
Nanomaterials (Basel). 2020.
PMID: 33114425
Free PMC article.
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Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack.
Park W, Yang JH, Kang CG, Lee YG, Hwang HJ, Cho C, Lim SK, Kang SC, Hong WK, Lee SK, Lee S, Lee BH.
Park W, et al. Among authors: kang sc.
Nanotechnology. 2013 Nov 29;24(47):475501. doi: 10.1088/0957-4484/24/47/475501. Epub 2013 Oct 31.
Nanotechnology. 2013.
PMID: 24177860
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Ferroelectric polymer-gated graphene memory with high speed conductivity modulation.
Hwang HJ, Yang JH, Lee YG, Cho C, Kang CG, Kang SC, Park W, Lee BH.
Hwang HJ, et al. Among authors: kang sc.
Nanotechnology. 2013 May 3;24(17):175202. doi: 10.1088/0957-4484/24/17/175202. Epub 2013 Apr 4.
Nanotechnology. 2013.
PMID: 23558367
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