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Page 1
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers.
Adv Sci (Weinh). 2018 Mar 27;5(6):1700955. doi: 10.1002/advs.201700955. eCollection 2018 Jun.
Adv Sci (Weinh). 2018.
PMID: 29938172
Free PMC article.
SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters.
von den Driesch N, Stange D, Wirths S, Rainko D, Povstugar I, Savenko A, Breuer U, Geiger R, Sigg H, Ikonic Z, Hartmann JM, Grützmacher D, Mantl S, Buca D.
von den Driesch N, et al. Among authors: mantl s.
Small. 2017 Apr;13(16). doi: 10.1002/smll.201603321. Epub 2017 Feb 3.
Small. 2017.
PMID: 28160408
Free article.
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A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor.
Vitale WA, Casu EA, Biswas A, Rosca T, Alper C, Krammer A, Luong GV, Zhao QT, Mantl S, Schüler A, Ionescu AM.
Vitale WA, et al. Among authors: mantl s.
Sci Rep. 2017 Mar 23;7(1):355. doi: 10.1038/s41598-017-00359-6.
Sci Rep. 2017.
PMID: 28336970
Free PMC article.
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Low V(π) Silicon photonics modulators with highly linear epitaxially grown phase shifters.
Azadeh SS, Merget F, Romero-García S, Moscoso-Mártir A, von den Driesch N, Müller J, Mantl S, Buca D, Witzens J.
Azadeh SS, et al. Among authors: mantl s.
Opt Express. 2015 Sep 7;23(18):23526-50. doi: 10.1364/OE.23.023526.
Opt Express. 2015.
PMID: 26368451
Free article.
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High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors.
Wirths S, Stange D, Pampillón MA, Tiedemann AT, Mussler G, Fox A, Breuer U, Baert B, San Andrés E, Nguyen ND, Hartmann JM, Ikonic Z, Mantl S, Buca D.
Wirths S, et al. Among authors: mantl s.
ACS Appl Mater Interfaces. 2015 Jan 14;7(1):62-7. doi: 10.1021/am5075248. Epub 2014 Dec 24.
ACS Appl Mater Interfaces. 2015.
PMID: 25531887
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Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance.
Saeidi A, Jazaeri F, Stolichnov I, Luong GV, Zhao QT, Mantl S, Ionescu AM.
Saeidi A, et al. Among authors: mantl s.
Nanotechnology. 2018 Mar 2;29(9):095202. doi: 10.1088/1361-6528/aaa590.
Nanotechnology. 2018.
PMID: 29373324
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Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures.
Gu C, Jiang X, Lu W, Li J, Mantl S.
Gu C, et al. Among authors: mantl s.
Sci Rep. 2012;2:746. doi: 10.1038/srep00746. Epub 2012 Oct 18.
Sci Rep. 2012.
PMID: 23082241
Free PMC article.
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