A highly sensitive CMOS digital Hall sensor for low magnetic field applications

Sensors (Basel). 2012;12(2):2162-74. doi: 10.3390/s120202162. Epub 2012 Feb 15.

Abstract

Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CMOS technology for low field applications. The sensor consists of a switched cross-shaped Hall plate and a novel signal conditioner. It effectively eliminates offset and low frequency 1/f noise by applying a dynamic quadrature offset cancellation technique. The measured results show the optimal Hall plate achieves a high current related sensitivity of about 310 V/AT. The whole sensor has a remarkable ability to measure a minimum ± 2 mT magnetic field and output a digital Hall signal in a wide temperature range from -40 °C to 120 °C.

Keywords: CMOS technology; Hall sensor; chopped technique; dynamic offset cancellation.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Equipment Design
  • Equipment Failure Analysis
  • Magnetic Fields
  • Magnetometry / instrumentation*
  • Semiconductors*
  • Transducers*