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Year | Number of Results |
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2020 | 1 |
2021 | 1 |
2022 | 2 |
2023 | 1 |
2024 | 0 |
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Page 1
Passivation efficacy study of Al2O3dielectric on self-catalyzed molecular beam epitaxially grown GaAs1-xSbxnanowires.
Nanotechnology. 2022 May 11;33(31). doi: 10.1088/1361-6528/ac69f8.
Nanotechnology. 2022.
PMID: 35468592
Heterostructure axial GaAsSb ensemble near-infrared p-i-n based axial configured nanowire photodetectors.
Devkota S, Kuchoor H, Dawkins K, Pokharel R, Parakh M, Li J, Iyer S.
Devkota S, et al.
Nanotechnology. 2023 Apr 18;34(26). doi: 10.1088/1361-6528/acc2c6.
Nanotechnology. 2023.
PMID: 36893449
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Revealing charge carrier dynamics and transport in Te-doped GaAsSb and GaAsSbN nanowires by correlating ultrafast terahertz spectroscopy and optoelectronic characterization.
Yuan L, Pokharel R, Devkota S, Kuchoor H, Dawkins K, Lee MC, Huang Y, Yarotski D, Iyer S, Prasankumar RP.
Yuan L, et al. Among authors: devkota s.
Nanotechnology. 2022 Jul 26;33(42). doi: 10.1088/1361-6528/ac7d61.
Nanotechnology. 2022.
PMID: 35772308
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A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM.
Ramaswamy P, Devkota S, Pokharel R, Nalamati S, Stevie F, Jones K, Reynolds L, Iyer S.
Ramaswamy P, et al. Among authors: devkota s.
Sci Rep. 2021 Apr 15;11(1):8329. doi: 10.1038/s41598-021-87825-4.
Sci Rep. 2021.
PMID: 33859310
Free PMC article.
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A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector.
Devkota S, Parakh M, Johnson S, Ramaswamy P, Lowe M, Penn A, Reynolds L, Iyer S.
Devkota S, et al.
Nanotechnology. 2020 Dec 11;31(50):505203. doi: 10.1088/1361-6528/abb506.
Nanotechnology. 2020.
PMID: 33021209
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