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sheng wu yi
(5 results)?
Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.
ACS Appl Mater Interfaces. 2013 Jan 23;5(2):227-32. doi: 10.1021/am301799j. Epub 2012 Dec 31.
ACS Appl Mater Interfaces. 2013.
PMID: 23259506
Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.
Shih HY, Shiojiri M, Chen CH, Yu SF, Ko CT, Yang JR, Lin RM, Chen MJ.
Shih HY, et al. Among authors: yu sf.
Sci Rep. 2015 Sep 2;5:13671. doi: 10.1038/srep13671.
Sci Rep. 2015.
PMID: 26329829
Free PMC article.
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