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2020 | 1 |
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High brightness edge-emitting laser diode with wavelength self-organization in ultra-broad emitting area.
Opt Express. 2024 Feb 26;32(5):8010-8019. doi: 10.1364/OE.515088.
Opt Express. 2024.
PMID: 38439468
Free article.
Beam waist shrinkage of high-power broad-area diode lasers by mode tailoring.
Su J, Tong C, Wang L, Wang Y, Lu H, Zhao Z, Wang J, Tan S, Shu S, Wang L.
Su J, et al. Among authors: tan s.
Opt Express. 2020 Apr 27;28(9):13131-13140. doi: 10.1364/OE.390265.
Opt Express. 2020.
PMID: 32403794
Free article.
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Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors.
Huo W, Liang S, Zhang C, Tan S, Han L, Xie H, Zhu H, Wang W.
Huo W, et al. Among authors: tan s.
Opt Express. 2014 Jan 27;22(2):1806-14. doi: 10.1364/OE.22.001806.
Opt Express. 2014.
PMID: 24515189
Free article.
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