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song yang
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Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems.
Nanoscale. 2023 Sep 1;15(34):14267. doi: 10.1039/d3nr90165c.
Nanoscale. 2023.
PMID: 37609880
Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma.
Mahata C, So H, Yang S, Ismail M, Kim S, Cho S.
Mahata C, et al. Among authors: yang s.
J Chem Phys. 2023 Nov 14;159(18):184712. doi: 10.1063/5.0179314.
J Chem Phys. 2023.
PMID: 37962452
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Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process.
Yang S, Park J, Cho Y, Lee Y, Kim S.
Yang S, et al.
Int J Mol Sci. 2022 Oct 31;23(21):13249. doi: 10.3390/ijms232113249.
Int J Mol Sci. 2022.
PMID: 36362036
Free PMC article.
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Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems.
Yang S, Kim T, Kim S, Chung D, Kim TH, Lee JK, Kim S, Ismail M, Mahata C, Kim S, Cho S.
Yang S, et al.
Nanoscale. 2023 Aug 17;15(32):13239-13251. doi: 10.1039/d3nr01930f.
Nanoscale. 2023.
PMID: 37525621
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