Search Page
Save citations to file
Email citations
Send citations to clipboard
Add to Collections
Add to My Bibliography
Create a file for external citation management software
Your saved search
Your RSS Feed
Filters
Results by year
Table representation of search results timeline featuring number of search results per year.
Year | Number of Results |
---|---|
2011 | 1 |
2022 | 1 |
2024 | 0 |
Search Results
2 results
Results by year
Filters applied: . Clear all
It looks like you are searching for an author.
Results are currently sorted by Best Match. To see the newest results first,
change the sort order to Most Recent.
Page 1
Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device.
Materials (Basel). 2022 Mar 24;15(7):2402. doi: 10.3390/ma15072402.
Materials (Basel). 2022.
PMID: 35407734
Free PMC article.
Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3.
Magyari-Köpe B, Tendulkar M, Park SG, Lee HD, Nishi Y.
Magyari-Köpe B, et al. Among authors: park sg.
Nanotechnology. 2011 Jun 24;22(25):254029. doi: 10.1088/0957-4484/22/25/254029. Epub 2011 May 16.
Nanotechnology. 2011.
PMID: 21572196
Item in Clipboard
Cite
Cite