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Microstructures of HfOx Films Prepared via Atomic Layer Deposition Using La(NO3)3·6H2O Oxidants.
Materials (Basel). 2021 Dec 6;14(23):7478. doi: 10.3390/ma14237478.
Materials (Basel). 2021.
PMID: 34885632
Free PMC article.
Resistive Switching Characteristics of Atomic-Layer-Deposited Y2O3 Insulators with Deposition Temperature.
Jung YC, Seong S, Lee T, Park IS, Ahn J.
Jung YC, et al. Among authors: seong s.
J Nanosci Nanotechnol. 2015 Oct;15(10):7586-9. doi: 10.1166/jnn.2015.11163.
J Nanosci Nanotechnol. 2015.
PMID: 26726377
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