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Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory.
Nanomaterials (Basel). 2023 Feb 27;13(5):900. doi: 10.3390/nano13050900.
Nanomaterials (Basel). 2023.
PMID: 36903776
Free PMC article.
Preparation of Remote Plasma Atomic Layer-Deposited HfO2 Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices.
Yoo JH, Park WJ, Kim SW, Lee GR, Kim JH, Lee JH, Uhm SH, Lee HC.
Yoo JH, et al. Among authors: uhm sh.
Nanomaterials (Basel). 2023 Jun 1;13(11):1785. doi: 10.3390/nano13111785.
Nanomaterials (Basel). 2023.
PMID: 37299688
Free PMC article.
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