Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga₂O₃/Ag/Ga₂O₃ Transparent Conductive Electrode

Hong Wang; Quanbin Zhou; Siwei Liang; Rulian Wen

doi:10.3390/nano9010066

Fabrication and Characterization of AlGaN-Based UV LEDs with a ITO/Ga₂O₃/Ag/Ga₂O₃ Transparent Conductive Electrode

Nanomaterials (Basel). 2019 Jan 5;9(1):66. doi: 10.3390/nano9010066.

Authors

Hong Wang^{1

2

3}, Quanbin Zhou⁴, Siwei Liang^{5

6}, Rulian Wen^{7

8}

Affiliations

¹ Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China. phhwang@scut.edu.cn.
² School of Physics and Optoelectronics, South China university of Technology, Guangzhou 510640, China. phhwang@scut.edu.cn.
³ Zhongshan Institute of Modern Industrial Technology, South China University of Technology, Zhongshan 528437, China. phhwang@scut.edu.cn.
⁴ Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China. zhouquanbin86@163.com.
⁵ Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China. 201620122572@mail.scut.edu.cn.
⁶ School of Physics and Optoelectronics, South China university of Technology, Guangzhou 510640, China. 201620122572@mail.scut.edu.cn.
⁷ Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China. wrl_789@163.com.
⁸ School of Physics and Optoelectronics, South China university of Technology, Guangzhou 510640, China. wrl_789@163.com.

Abstract

We fabricated a complex transparent conductive electrode (TCE) based on Ga₂O₃ for AlGaN-based ultraviolet light-emitting diodes. The complex TCE consists of a 10 nm ITO, a 15 nm Ga₂O₃, a 7 nm Ag, and a 15 nm Ga₂O₃, forming a ITO/Ga₂O₃/Ag/Ga₂O₃ multilayer. The metal layer embedded into Ga₂O₃ and the thin ITO contact layer improves current spreading and electrode contact properties. It is found that the ITO/Ga₂O₃/Ag/Ga₂O₃ multilayer can reach a 92.8% transmittance at 365 nm and a specific contact resistance of 10^-3 Ω·cm² with suitable annealing conditions.

Keywords: AlGaN-based ultraviolet light-emitting diode; Ga2O3; sheet resistance; transmittance; transparent conductive electrode.

Abstract

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