Renaud Leturcq - Search Results

Year	Number of Results
2007	1
2008	1
2010	1
2013	1
2014	2
2016	1
2017	1
2019	1
2020	2
2024	1

1

Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System.

de la Mata M, Leturcq R, Plissard SR, Rolland C, Magén C, Arbiol J, Caroff P. de la Mata M, et al. Among authors: leturcq r. Nano Lett. 2016 Feb 10;16(2):825-33. doi: 10.1021/acs.nanolett.5b05125. Epub 2016 Jan 11. Nano Lett. 2016. PMID: 26733426 Free article.

2

Electrical properties of strained off-stoichiometric Cu-Cr-O delafossite thin films.

Moreira M, Crêpellière J, Polesel-Maris J, Leturcq R, Guillot J, Fleming Y, Lunca-Popa P. Moreira M, et al. Among authors: leturcq r. J Phys Condens Matter. 2024 Feb 26;36(21). doi: 10.1088/1361-648X/ad2a07. J Phys Condens Matter. 2024. PMID: 38364261

3

Two-Step Approach for Conformal Chemical Vapor-Phase Deposition of Ultra-Thin Conductive Silver Films.

Wack S, Lunca Popa P, Adjeroud N, Vergne C, Leturcq R. Wack S, et al. Among authors: leturcq r. ACS Appl Mater Interfaces. 2020 Aug 12;12(32):36329-36338. doi: 10.1021/acsami.0c08606. Epub 2020 Jul 29. ACS Appl Mater Interfaces. 2020. PMID: 32666787 Free article.

4

High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Compromises toward Better Electrochemical Biosensing.

Rollo S, Rani D, Leturcq R, Olthuis W, Pascual García C. Rollo S, et al. Among authors: leturcq r. Nano Lett. 2019 May 8;19(5):2879-2887. doi: 10.1021/acs.nanolett.8b04988. Epub 2019 Apr 30. Nano Lett. 2019. PMID: 31014066

5

Transparent Ferroelectric Capacitors on Glass.

Sette D, Girod S, Leturcq R, Glinsek S, Defay E. Sette D, et al. Among authors: leturcq r. Micromachines (Basel). 2017 Oct 20;8(10):313. doi: 10.3390/mi8100313. Micromachines (Basel). 2017. PMID: 30400503 Free PMC article.

6

Correction to "High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Compromises toward Better Electrochemical Biosensing".

Rollo S, Rani D, Leturcq R, Olthuis W, García CP. Rollo S, et al. Among authors: leturcq r. Nano Lett. 2020 Apr 8;20(4):2934. doi: 10.1021/acs.nanolett.0c01081. Epub 2020 Mar 17. Nano Lett. 2020. PMID: 32181670 No abstract available.

7

Confinement-modulated junctionless nanowire transistors for logic circuits.

Vaurette F, Leturcq R, Lepilliet S, Grandidier B, Stiévenard D. Vaurette F, et al. Among authors: leturcq r. Nanoscale. 2014 Nov 21;6(22):13446-50. doi: 10.1039/c4nr04047c. Nanoscale. 2014. PMID: 25297836

8

Magnetotransport subband spectroscopy in InAs nanowires.

Vigneau F, Prudkovkiy V, Duchemin I, Escoffier W, Caroff P, Niquet YM, Leturcq R, Goiran M, Raquet B. Vigneau F, et al. Among authors: leturcq r. Phys Rev Lett. 2014 Feb 21;112(7):076801. doi: 10.1103/PhysRevLett.112.076801. Epub 2014 Feb 20. Phys Rev Lett. 2014. PMID: 24579622

9

Persistent enhancement of the carrier density in electron irradiated InAs nanowires.

Durand C, Berthe M, Makoudi Y, Nys JP, Leturcq R, Caroff P, Grandidier B. Durand C, et al. Among authors: leturcq r. Nanotechnology. 2013 Jul 12;24(27):275706. doi: 10.1088/0957-4484/24/27/275706. Epub 2013 Jun 14. Nanotechnology. 2013. PMID: 23764855

10

Nonequilibrium fluctuation relations in a quantum coherent conductor.

Nakamura S, Yamauchi Y, Hashisaka M, Chida K, Kobayashi K, Ono T, Leturcq R, Ensslin K, Saito K, Utsumi Y, Gossard AC. Nakamura S, et al. Among authors: leturcq r. Phys Rev Lett. 2010 Feb 26;104(8):080602. doi: 10.1103/PhysRevLett.104.080602. Epub 2010 Feb 25. Phys Rev Lett. 2010. PMID: 20366923

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