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Page 1
The Spatial Correlation and Anisotropy of β-(AlxGa1-x)2O3 Single Crystal.
Materials (Basel). 2023 Jun 8;16(12):4269. doi: 10.3390/ma16124269.
Materials (Basel). 2023.
PMID: 37374452
Free PMC article.
Effective Suppression of MIS Interface Defects Using Boron Nitride toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.
Li XX, Sun Y, Zeng G, Li YC, Zhang R, Sai QL, Xia CT, Zhang DW, Yang YG, Lu HL.
Li XX, et al.
J Phys Chem Lett. 2022 Apr 21;13(15):3377-3381. doi: 10.1021/acs.jpclett.2c00722. Epub 2022 Apr 11.
J Phys Chem Lett. 2022.
PMID: 35404057
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Fabrication of a Nb-Doped β-Ga2O3 Nanobelt Field-Effect Transistor and Its Low-Temperature Behavior.
Chen JX, Li XX, Tao JJ, Cui HY, Huang W, Ji ZG, Sai QL, Xia CT, Lu HL, Zhang DW.
Chen JX, et al.
ACS Appl Mater Interfaces. 2020 Feb 19;12(7):8437-8445. doi: 10.1021/acsami.9b20499. Epub 2020 Feb 10.
ACS Appl Mater Interfaces. 2020.
PMID: 32003210
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