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Page 1
Passivation efficacy study of Al2O3dielectric on self-catalyzed molecular beam epitaxially grown GaAs1-xSbxnanowires.
Nanotechnology. 2022 May 11;33(31). doi: 10.1088/1361-6528/ac69f8.
Nanotechnology. 2022.
PMID: 35468592
A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM.
Ramaswamy P, Devkota S, Pokharel R, Nalamati S, Stevie F, Jones K, Reynolds L, Iyer S.
Ramaswamy P, et al.
Sci Rep. 2021 Apr 15;11(1):8329. doi: 10.1038/s41598-021-87825-4.
Sci Rep. 2021.
PMID: 33859310
Free PMC article.
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Space charge limited conduction mechanism in GaAsSb nanowires and the effect of in situ annealing in ultra-high vacuum.
Parakh M, Johnson S, Pokharel R, Ramaswamy P, Nalamati S, Li J, Iyer S.
Parakh M, et al. Among authors: ramaswamy p.
Nanotechnology. 2020 Jan 10;31(2):025205. doi: 10.1088/1361-6528/ab47aa. Epub 2019 Sep 25.
Nanotechnology. 2020.
PMID: 31553959
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A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector.
Devkota S, Parakh M, Johnson S, Ramaswamy P, Lowe M, Penn A, Reynolds L, Iyer S.
Devkota S, et al. Among authors: ramaswamy p.
Nanotechnology. 2020 Dec 11;31(50):505203. doi: 10.1088/1361-6528/abb506.
Nanotechnology. 2020.
PMID: 33021209
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Corrigendum: Space charge limited conduction mechanism in GaAsSb nanowires and the effect of in-situ annealing in ultra-high vacuum (2020 Nanotechnology 31 025205).
Parakh M, Johnson S, Pokharel R, Ramaswamy P, Nalamati S, Li J, Iyer S.
Parakh M, et al. Among authors: ramaswamy p.
Nanotechnology. 2020 Mar 18. doi: 10.1088/1361-6528/ab80fc. Online ahead of print.
Nanotechnology. 2020.
PMID: 32187593
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