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Page 1
Formation of GeO2 under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor.
Molecules. 2022 Jun 6;27(11):3636. doi: 10.3390/molecules27113636.
Molecules. 2022.
PMID: 35684572
Free PMC article.
Growth of highly oriented MoS2via an intercalation process in the graphene/SiC(0001) system.
Michałowski PP, Knyps P, Ciepielewski P, Caban PA, Dumiszewska E, Kowalski G, Tokarczyk M, Baranowski JM.
Michałowski PP, et al. Among authors: caban pa.
Phys Chem Chem Phys. 2019 Oct 7;21(37):20641-20646. doi: 10.1039/c9cp03846a. Epub 2019 Sep 11.
Phys Chem Chem Phys. 2019.
PMID: 31506649
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