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Page 1
Wetting state and mechanical property alteration for the Fe3Si films using rapid thermal annealing under various temperatures.
Heliyon. 2023 Nov 19;9(12):e22511. doi: 10.1016/j.heliyon.2023.e22511. eCollection 2023 Dec.
Heliyon. 2023.
PMID: 38094046
Free PMC article.
The Role of Zn Substitution in Improving the Electrical Properties of CuI Thin Films and Optoelectronic Performance of CuI MSM Photodetectors.
Tsay CY, Chen YC, Tsai HM, Sittimart P, Yoshitake T.
Tsay CY, et al. Among authors: sittimart p.
Materials (Basel). 2022 Nov 17;15(22):8145. doi: 10.3390/ma15228145.
Materials (Basel). 2022.
PMID: 36431630
Free PMC article.
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Diode Parameters and Equivalent Electrical Circuit Model of n-Type Silicon/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition.
Chaleawpong R, Promros N, Charoenyuenyao P, Sittimart P, Takeichi S, Katamune Y, Zkria A, Abubakr E, Egiza M, Ali AM, Yoshitake T.
Chaleawpong R, et al. Among authors: sittimart p.
J Nanosci Nanotechnol. 2020 Aug 1;20(8):4884-4891. doi: 10.1166/jnn.2020.17838.
J Nanosci Nanotechnol. 2020.
PMID: 32126670
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Interface State Density and Series Resistance of n-Type Nanocrystalline FeSi₂/p-Type Si Heterojunctions Formed by Utilizing Facing-Target Direct-Current Sputtering.
Sittimart P, Duangrawa A, Onsee P, Teakchaicum S, Nopparuchikun A, Promros N.
Sittimart P, et al.
J Nanosci Nanotechnol. 2018 Mar 1;18(3):1841-1846. doi: 10.1166/jnn.2018.14991.
J Nanosci Nanotechnol. 2018.
PMID: 29448669
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Photovoltaic Properties and Series Resistance of p-Type Si/Intrinsic Si/n-Type Nanocrystalline FeSi₂ Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering.
Kaenrai W, Promros N, Sittimart P, Chaleawpong R, Charoenyuenyao P, Changcharoen T, Nopparuchikun A, Nogami T, Yoshitake T.
Kaenrai W, et al. Among authors: sittimart p.
J Nanosci Nanotechnol. 2019 Mar 1;19(3):1445-1450. doi: 10.1166/jnn.2019.16234.
J Nanosci Nanotechnol. 2019.
PMID: 30469203
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