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Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT.
Materials (Basel). 2022 Dec 19;15(24):9067. doi: 10.3390/ma15249067.
Materials (Basel). 2022.
PMID: 36556876
Free PMC article.
High Linearity Synaptic Devices Using Ar Plasma Treatment on HfO2 Thin Film with Non-Identical Pulse Waveforms.
Lee KJ, Weng YC, Wang LW, Lin HN, Pal P, Chu SY, Lu D, Wang YH.
Lee KJ, et al. Among authors: pal p.
Nanomaterials (Basel). 2022 Sep 19;12(18):3252. doi: 10.3390/nano12183252.
Nanomaterials (Basel). 2022.
PMID: 36145040
Free PMC article.
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