Anti-Blooming Clocking for Time-Delay Integration CCDs

Sensors (Basel). 2022 Oct 4;22(19):7520. doi: 10.3390/s22197520.

Abstract

This paper presents an investigation of the responsivity of a time-delay integration (TDI) charge-coupled device that employs anti-blooming clocking and uses a varying number of TDI stages. The influence of charge blooming caused by unused TDI stages in a TDI deployed selection scheme is shown experimentally, and an anti-blooming clocking mechanism is analyzed. The impact of blooming on sensor characteristics, such as the responsivity, the conversion gain, and the signal-to-noise ratio, is investigated. A comparison of the measurements with and without this anti-blooming clocking mechanism is presented and discussed in detail.

Keywords: blooming; charge-coupled device; conversion gain; photon transfer curve; responsivity; signal-to-noise ratio; time delay integration.

MeSH terms

  • Signal-To-Noise Ratio*

Grants and funding

This research received no external funding.