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noman lih
(17 results)?
Application of Si and SiO2 Etching Mechanisms in CF4/C4F8/Ar Inductively Coupled Plasmas for Nanoscale Patterns.
J Nanosci Nanotechnol. 2015 Oct;15(10):8340-7. doi: 10.1166/jnn.2015.11256.
J Nanosci Nanotechnol. 2015.
PMID: 26726514
On the etching characteristics and mechanisms of HfO2 thin films in CF4/O2/Ar and CHF3/O2/Ar plasma for nano-devices.
Lim N, Efremov A, Yeom GY, Kwon KH.
Lim N, et al.
J Nanosci Nanotechnol. 2014 Dec;14(12):9670-9. doi: 10.1166/jnn.2014.10171.
J Nanosci Nanotechnol. 2014.
PMID: 25971118
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Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar.
Lim N, Choi YS, Efremov A, Kwon KH.
Lim N, et al.
Materials (Basel). 2021 Mar 24;14(7):1595. doi: 10.3390/ma14071595.
Materials (Basel). 2021.
PMID: 33805202
Free PMC article.
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