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An enhanced two-dimensional hole gas (2DHG) C-H diamond with positive surface charge model for advanced normally-off MOSFET devices.
Sci Rep. 2022 Mar 10;12(1):4203. doi: 10.1038/s41598-022-05180-4.
Sci Rep. 2022.
PMID: 35273177
Free PMC article.
Role of Carboxyl and Amine Termination on a Boron-Doped Diamond Solution Gate Field Effect Transistor (SGFET) for pH Sensing.
Falina S, Kawai S, Oi N, Yamano H, Kageura T, Suaebah E, Inaba M, Shintani Y, Syamsul M, Kawarada H.
Falina S, et al. Among authors: oi n.
Sensors (Basel). 2018 Jul 6;18(7):2178. doi: 10.3390/s18072178.
Sensors (Basel). 2018.
PMID: 29986461
Free PMC article.
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Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors.
Oi N, Inaba M, Okubo S, Tsuyuzaki I, Kageura T, Onoda S, Hiraiwa A, Kawarada H.
Oi N, et al.
Sci Rep. 2018 Jul 13;8(1):10660. doi: 10.1038/s41598-018-28837-5.
Sci Rep. 2018.
PMID: 30006560
Free PMC article.
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