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Improved resistive switching characteristics of a multi-stacked HfO2/Al2O3/HfO2 RRAM structure for neuromorphic and synaptic applications: experimental and computational study.
RSC Adv. 2022 Apr 14;12(19):11649-11656. doi: 10.1039/d1ra08103a. eCollection 2022 Apr 13.
RSC Adv. 2022.
PMID: 35432948
Free PMC article.
ab initio study of oxygen vacancy effects on structural, electronic and thermoelectric behavior of AZr1-xMxO3 (A = Ba, Ca, Sr; M= Al, Cu, x = 0.25) for application of memory devices.
Khera EA, Ullah H, Imran M, Niaz NA, Hussain F, Khalil RMA, Resheed U, Rana AM, Hussain MI, Mahata C, Kim S.
Khera EA, et al. Among authors: niaz na.
J Mol Graph Model. 2021 Mar;103:107825. doi: 10.1016/j.jmgm.2020.107825. Epub 2020 Dec 21.
J Mol Graph Model. 2021.
PMID: 33429230
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