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Page 1
Analysis of Lanthanum Oxide Based Double-Gate SOI MOSFET using Monte-Carlo Process.
Recent Pat Nanotechnol. 2024 Jan 10. doi: 10.2174/0118722105273476231201073651. Online ahead of print.
Recent Pat Nanotechnol. 2024.
PMID: 38213154
Parametric Analysis of Indium Gallium Arsenide Wafer-based Thin Body (5 nm) Double-gate MOSFETs for Hybrid RF Applications.
Paramasivam P, Gowthaman N, Srivastava VM.
Paramasivam P, et al. Among authors: gowthaman n.
Recent Pat Nanotechnol. 2023 Aug 22. doi: 10.2174/1872210517666230602095347. Online ahead of print.
Recent Pat Nanotechnol. 2023.
PMID: 37723950
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Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La2O3 Oxide Layer with Fabrication-A Nanomaterial Approach.
Gowthaman N, Srivastava VM.
Gowthaman N, et al.
Nanomaterials (Basel). 2022 Sep 27;12(19):3374. doi: 10.3390/nano12193374.
Nanomaterials (Basel). 2022.
PMID: 36234508
Free PMC article.
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Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid Applications.
Paramasivam P, Gowthaman N, Srivastava VM.
Paramasivam P, et al. Among authors: gowthaman n.
Nanomaterials (Basel). 2023 Mar 7;13(6):959. doi: 10.3390/nano13060959.
Nanomaterials (Basel). 2023.
PMID: 36985854
Free PMC article.
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Investigations on Cylindrical Surrounding Double-Gate (CSDG) MOSFET using AlxGa1-xAs/InP: Pt with La2O3 oxide layer for fabrication.
Gowthaman N, M Srivastava V.
Gowthaman N, et al.
Recent Pat Nanotechnol. 2023 Apr 27. doi: 10.2174/1872210517666230427163447. Online ahead of print.
Recent Pat Nanotechnol. 2023.
PMID: 37132315
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