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Special Issue: Nanowire Field-Effect Transistor (FET).
Materials (Basel). 2020 Apr 14;13(8):1845. doi: 10.3390/ma13081845.
Materials (Basel). 2020.
PMID: 32295217
Free PMC article.
A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint.
García-Loureiro A, Seoane N, Fernández JG, Comesaña E, Pichel JC.
García-Loureiro A, et al. Among authors: seoane n.
PLoS One. 2023 Jul 24;18(7):e0288964. doi: 10.1371/journal.pone.0288964. eCollection 2023.
PLoS One. 2023.
PMID: 37486944
Free PMC article.
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A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs.
Seoane N, Nagy D, Indalecio G, Espiñeira G, Kalna K, García-Loureiro A.
Seoane N, et al.
Materials (Basel). 2019 Jul 26;12(15):2391. doi: 10.3390/ma12152391.
Materials (Basel). 2019.
PMID: 31357496
Free PMC article.
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Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness.
Nagy D, Aldegunde M, Elmessary MA, García-Loureiro AJ, Seoane N, Kalna K.
Nagy D, et al. Among authors: seoane n.
J Phys Condens Matter. 2018 Apr 11;30(14):144006. doi: 10.1088/1361-648X/aab10f. Epub 2018 Feb 21.
J Phys Condens Matter. 2018.
PMID: 29465038
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Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors.
Aldegunde M, Seoane N, García-Loureiro AJ, Sushko PV, Shluger AL, Gavartin JL, Kalna K, Asenov A.
Aldegunde M, et al. Among authors: seoane n.
Phys Rev E Stat Nonlin Soft Matter Phys. 2008 May;77(5 Pt 2):056702. doi: 10.1103/PhysRevE.77.056702. Epub 2008 May 8.
Phys Rev E Stat Nonlin Soft Matter Phys. 2008.
PMID: 18643190
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