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Page 1
Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices.
Nanomaterials (Basel). 2023 Jul 26;13(15):2179. doi: 10.3390/nano13152179.
Nanomaterials (Basel). 2023.
PMID: 37570498
Free PMC article.
Porous SiO₂/MgF₂ broadband antireflection coatings for superstrate-type silicon-based tandem cells.
Wang NF, Kuo TW, Tsai YZ, Lin SX, Hung PK, Lin CL, Houng MP.
Wang NF, et al.
Opt Express. 2012 Mar 26;20(7):7445-53. doi: 10.1364/OE.20.007445.
Opt Express. 2012.
PMID: 22453424
Free article.
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First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices.
Chen KH, Cheng CM, Wang NF, Hung HW, Li CY, Wu S.
Chen KH, et al. Among authors: wang nf.
Nanomaterials (Basel). 2023 Jan 1;13(1):198. doi: 10.3390/nano13010198.
Nanomaterials (Basel). 2023.
PMID: 36616108
Free PMC article.
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Proton-exchanged wet etching of recessed-structure SAW filter.
Tsai SH, Wang NF, Houng MP, Wang YH.
Tsai SH, et al. Among authors: wang nf.
IEEE Trans Ultrason Ferroelectr Freq Control. 2003 Sep;50(9):1219-22. doi: 10.1109/tuffc.2003.1235335.
IEEE Trans Ultrason Ferroelectr Freq Control. 2003.
PMID: 14561040
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Investigation of the Stability of Methylammonium Lead Iodide (MAPbI3) Film Doped with Lead Cesium Triiodide (CsPbI3) Quantum Dots under an Oxygen Plasma Atmosphere.
Huang PH, Wang CW, Lien SY, Lee KW, Wang NF, Huang CJ.
Huang PH, et al. Among authors: wang nf.
Molecules. 2021 May 3;26(9):2678. doi: 10.3390/molecules26092678.
Molecules. 2021.
PMID: 34063657
Free PMC article.
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Direct bonding of recessed-structure SAW filter on silicon substrate.
Tsai SH, Wang NF, Horng JH, Houng MP, Wang YH.
Tsai SH, et al. Among authors: wang nf.
IEEE Trans Ultrason Ferroelectr Freq Control. 2004 Jul;51(7):913-6. doi: 10.1109/tuffc.2004.1320752.
IEEE Trans Ultrason Ferroelectr Freq Control. 2004.
PMID: 15301012
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