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Did you mean N. cogneau (4 results)?
High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires.
Jegenyes N, Morassi M, Chrétien P, Travers L, Lu L, Julien FH, Tchernycheva M, Houzé F, Gogneau N. Jegenyes N, et al. Nanomaterials (Basel). 2018 May 25;8(6):367. doi: 10.3390/nano8060367. Nanomaterials (Basel). 2018. PMID: 29799440 Free PMC article.
Field-dependent abundances of hydride molecular ions in atom probe tomography of III-N semiconductors.
Diagne A, Garcia LG, Ndiaye S, Gogneau N, Vrellou M, Houard J, Rigutti L. Diagne A, et al. J Microsc. 2024 Mar;293(3):153-159. doi: 10.1111/jmi.13233. Epub 2023 Oct 16. J Microsc. 2024. PMID: 37843285
We investigate the microscopic behaviour of hydrogen-containing species formed on the surface of III-N semiconductor samples by the residual hydrogen in the analysis chamber in laser-assisted atom probe tomography (APT). ...
We investigate the microscopic behaviour of hydrogen-containing species formed on the surface of III-N semiconductor samples by the r …
Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecular-beam epitaxy.
Saket O, Wang J, Amador-Mendez N, Morassi M, Kunti A, Bayle F, Collin S, Jollivet A, Babichev A, Sodhi T, Harmand JC, Julien FH, Gogneau N, Tchernycheva M. Saket O, et al. Nanotechnology. 2021 Feb 19;32(8):085705. doi: 10.1088/1361-6528/abc91a. Nanotechnology. 2021. PMID: 33171444
Different junction architectures having either a n-base or a p-base structure are compared using optical and electrical analyses. Electron-beam induced current (EBIC) microscopy of the nanowires shows that in the case of a n-base p-n junction the parasitic ra …
Different junction architectures having either a n-base or a p-base structure are compared using optical and electrical analyses. Ele …
Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques.
Piazza V, Babichev AV, Mancini L, Morassi M, Quach P, Bayle F, Largeau L, Julien FH, Rale P, Collin S, Harmand JC, Gogneau N, Tchernycheva M. Piazza V, et al. Nanotechnology. 2019 May 24;30(21):214006. doi: 10.1088/1361-6528/ab055e. Epub 2019 Feb 8. Nanotechnology. 2019. PMID: 30736025
In this work, nanoscale electrical and optical properties of n-GaN nanowires (NWs) containing GaN/AlN multiple quantum discs (MQDs) grown by molecular beam epitaxy are investigated by means of single wire I(V) measurements, electron beam induced current microscopy (EBIC) a …
In this work, nanoscale electrical and optical properties of n-GaN nanowires (NWs) containing GaN/AlN multiple quantum discs (MQDs) g …
Self-induced growth of vertical GaN nanowires on silica.
Kumaresan V, Largeau L, Oehler F, Zhang H, Mauguin O, Glas F, Gogneau N, Tchernycheva M, Harmand JC. Kumaresan V, et al. Nanotechnology. 2016 Apr 1;27(13):135602. doi: 10.1088/0957-4484/27/13/135602. Epub 2016 Feb 19. Nanotechnology. 2016. PMID: 26895252
The polarity inversion domains are much less frequent, if not totally absent, in the nanowires grown on silica, which we find to be N-polar. This work demonstrates that high-quality vertical GaN nanowires can be elaborated without resorting to bulk crystalline substrates.. …
The polarity inversion domains are much less frequent, if not totally absent, in the nanowires grown on silica, which we find to be N …