AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein

Sensors (Basel). 2015 Jul 28;15(8):18416-26. doi: 10.3390/s150818416.

Abstract

In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region.

Keywords: AlGaN/GaN; CRP; HEMT; biosensor; null-balancing circuit.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Aluminum Compounds / chemistry*
  • Biosensing Techniques / instrumentation*
  • C-Reactive Protein / analysis*
  • Electricity
  • Electrons*
  • Gallium / chemistry*
  • Humans
  • Photoelectron Spectroscopy
  • Transistors, Electronic*

Substances

  • Aluminum Compounds
  • aluminum gallium nitride
  • gallium nitride
  • C-Reactive Protein
  • Gallium