Au/0.8 nm-GaN/n-GaAs Schottky diodes were manufactured and electrically characterized over a wide temperature range. As a result, the reverse current Iinv increments from 1 × 10-7 A at 80 K to about 1 × 10-5 A at 420 K. The ideality factor n shows low values, decreasing from 2 at 80 K to 1.01 at 420 K. The barrier height qϕb grows abnormally from 0.46 eV at 80 K to 0.83 eV at 420 K. The tunnel mechanism TFE effect is the responsible for the qϕb behavior. The series resistance Rs is very low, decreasing from 13.80 Ω at 80 K to 4.26 Ω at 420 K. These good results are due to the good quality of the interface treated by the nitridation process. However, the disadvantage of the nitridation treatment is the fact that the GaN thin layer causes an inhomogeneous barrier height.
Keywords: GaN/n–GaAs; I-V-T; Schottky diode; barrier height; conduction mechanisms; nitridation.