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Table representation of search results timeline featuring number of search results per year.
Year | Number of Results |
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2021 | 2 |
2022 | 1 |
2024 | 0 |
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Prediction of a new two-dimensional valleytronic semiconductor MoGe(2)P(4) with large valley spin splitting.
Phys Chem Chem Phys. 2022 Nov 2;24(42):25962-25968. doi: 10.1039/d2cp03234a.
Phys Chem Chem Phys. 2022.
PMID: 36263721
The results show that 2D MoGe(2)P(4) is a direct semiconductor with a bandgap of 887 meV. ...Our results suggest that 2D MoGe(2)P(4) has excellent potential for applications in valley electronics and optoelectronic devices....
The results show that 2D MoGe(2)P(4) is a direct semiconductor with a bandgap of 887 meV. ...Our results suggest that 2D MoGe( …
Manipulable Electronic and Optical Properties of Two-Dimensional MoSTe/MoGe(2)N(4) van der Waals Heterostructures.
Wang J, Zhao X, Hu G, Ren J, Yuan X.
Wang J, et al.
Nanomaterials (Basel). 2021 Dec 8;11(12):3338. doi: 10.3390/nano11123338.
Nanomaterials (Basel). 2021.
PMID: 34947685
Free PMC article.
The results show that Te(4)-MoSTe/MoGe(2)N(4) vdWH is a semimetal, while S(4)-MoSTe/MoGe(2)N(4) vdWH is a direct band gap semiconductor. ...These studies show that MoSTe/MoGe(2)N(4) vdWH is an excellent candidate for high-performance optoelectronic devices... …
The results show that Te(4)-MoSTe/MoGe(2)N(4) vdWH is a semimetal, while S(4)-MoSTe/MoGe(2)N(4) vdWH is a direct band gap semi …
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Clinical and Imaging Features of Patients With Encephalitic Symptoms and Myelin Oligodendrocyte Glycoprotein Antibodies.
Wang J, Qiu Z, Li D, Yang X, Ding Y, Gao L, Liu A, Song Y, Li C, Gao R, Wang L, Wu L, Jia L, Guo D, Zhou A, Jia J, Huang L, Qu M, Gao L, Dong H, Hao J, Liu Z.
Wang J, et al.
Front Immunol. 2021 Oct 7;12:722404. doi: 10.3389/fimmu.2021.722404. eCollection 2021.
Front Immunol. 2021.
PMID: 34691028
Free PMC article.
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