Modeling of Photoinduced Deformation in Silicon Microcantilever

Yu-Lin Guo; Jia Zhou; Yiping Huang; MinHang Bao

doi:10.3390/s7091713

Modeling of Photoinduced Deformation in Silicon Microcantilever

Sensors (Basel). 2007 Sep 3;7(9):1713-1719. doi: 10.3390/s7091713.

Authors

Yu-Lin Guo¹, Jia Zhou², Yiping Huang³, MinHang Bao⁴

Affiliations

¹ ASIC and System National Key Lab, Department of Microelectronics, Fudan University, Shanghai 200433, China. 042052033@fudan.edu.cn.
² ASIC and System National Key Lab, Department of Microelectronics, Fudan University, Shanghai 200433, China. jia.zhou@fudan.edu.cn.
³ ASIC and System National Key Lab, Department of Microelectronics, Fudan University, Shanghai 200433, China. yphuang@fudan.edu.cn.
⁴ ASIC and System National Key Lab, Department of Microelectronics, Fudan University, Shanghai 200433, China. mhbao@fudan.edu.cn.

Abstract

A model for prediction the photostriction effect in silicon microcantilevers is built up based on the fundamentals of mechanics and semiconductor physics. By considering the spatial distribution and surface recombination of photoinduced carriers in silicon, the model interprets the cause of the photoinduced bending. The results from our model much more closely approximate the experimental values than the former model built up by Datskos, Rajic and Datskou [1](APL, Vol.73 (1998) No.16, pp 3219-2321), represented by the reduction of the error between calculation and measurement from 25 times to 0.85 times.

Keywords: Photostriction; deformation; microcantilever; silicon.