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Special Issue "Advances in Epitaxial Materials"-Editorial Preface.
Materials (Basel). 2020 Jun 9;13(11):2622. doi: 10.3390/ma13112622.
Materials (Basel). 2020.
PMID: 32526863
Free PMC article.
The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs.
Grabowski M, Grzanka E, Grzanka S, Lachowski A, Smalc-Koziorowska J, Czernecki R, Hrytsak R, Moneta J, Gawlik G, Turos A, Leszczyński M.
Grabowski M, et al. Among authors: leszczynski m.
Sci Rep. 2021 Jan 28;11(1):2458. doi: 10.1038/s41598-021-81017-w.
Sci Rep. 2021.
PMID: 33510188
Free PMC article.
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Influence of Showerhead-Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth.
Czernecki R, Moszak K, Olszewski W, Grzanka E, Leszczynski M.
Czernecki R, et al. Among authors: leszczynski m.
Materials (Basel). 2019 Oct 16;12(20):3375. doi: 10.3390/ma12203375.
Materials (Basel). 2019.
PMID: 31623121
Free PMC article.
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Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
Schilirò E, Giannazzo F, Di Franco S, Greco G, Fiorenza P, Roccaforte F, Prystawko P, Kruszewski P, Leszczynski M, Cora I, Pécz B, Fogarassy Z, Lo Nigro R.
Schilirò E, et al. Among authors: leszczynski m.
Nanomaterials (Basel). 2021 Dec 7;11(12):3316. doi: 10.3390/nano11123316.
Nanomaterials (Basel). 2021.
PMID: 34947665
Free PMC article.
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Visible light communications using a directly modulated 422 nm GaN laser diode.
Watson S, Tan M, Najda SP, Perlin P, Leszczynski M, Targowski G, Grzanka S, Kelly AE.
Watson S, et al. Among authors: leszczynski m.
Opt Lett. 2013 Oct 1;38(19):3792-4. doi: 10.1364/OL.38.003792.
Opt Lett. 2013.
PMID: 24081054
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Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells.
Smalc-Koziorowska J, Grzanka E, Lachowski A, Hrytsak R, Grabowski M, Grzanka S, Kret S, Czernecki R, Turski H, Marona L, Markurt T, Schulz T, Albrecht M, Leszczynski M.
Smalc-Koziorowska J, et al. Among authors: leszczynski m.
ACS Appl Mater Interfaces. 2021 Feb 17;13(6):7476-7484. doi: 10.1021/acsami.0c21293. Epub 2021 Feb 2.
ACS Appl Mater Interfaces. 2021.
PMID: 33529520
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Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes.
Sarzyński M, Grzanka E, Grzanka S, Targowski G, Czernecki R, Reszka A, Holy V, Nitta S, Liu Z, Amano H, Leszczyński M.
Sarzyński M, et al. Among authors: leszczynski m.
Materials (Basel). 2019 Aug 14;12(16):2583. doi: 10.3390/ma12162583.
Materials (Basel). 2019.
PMID: 31416124
Free PMC article.
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