Michael R. Koehler - Search Results

Year	Number of Results
2016	1
2018	1
2019	1
2021	2
2022	3
2024	0

1

Interlayer Exciton Diode and Transistor.

Shanks DN, Mahdikhanysarvejahany F, Stanfill TG, Koehler MR, Mandrus DG, Taniguchi T, Watanabe K, LeRoy BJ, Schaibley JR. Shanks DN, et al. Among authors: koehler mr. Nano Lett. 2022 Aug 24;22(16):6599-6605. doi: 10.1021/acs.nanolett.2c01905. Epub 2022 Aug 15. Nano Lett. 2022. PMID: 35969812

2

2D semiconductor nonlinear plasmonic modulators.

Klein M, Badada BH, Binder R, Alfrey A, McKie M, Koehler MR, Mandrus DG, Taniguchi T, Watanabe K, LeRoy BJ, Schaibley JR. Klein M, et al. Among authors: koehler mr. Nat Commun. 2019 Jul 22;10(1):3264. doi: 10.1038/s41467-019-11186-w. Nat Commun. 2019. PMID: 31332203 Free PMC article.

3

Slow light in a 2D semiconductor plasmonic structure.

Klein M, Binder R, Koehler MR, Mandrus DG, Taniguchi T, Watanabe K, Schaibley JR. Klein M, et al. Among authors: koehler mr. Nat Commun. 2022 Oct 20;13(1):6216. doi: 10.1038/s41467-022-33965-8. Nat Commun. 2022. PMID: 36266309 Free PMC article.

4

Nanoscale Trapping of Interlayer Excitons in a 2D Semiconductor Heterostructure.

Shanks DN, Mahdikhanysarvejahany F, Muccianti C, Alfrey A, Koehler MR, Mandrus DG, Taniguchi T, Watanabe K, Yu H, LeRoy BJ, Schaibley JR. Shanks DN, et al. Among authors: koehler mr. Nano Lett. 2021 Jul 14;21(13):5641-5647. doi: 10.1021/acs.nanolett.1c01215. Epub 2021 Jun 24. Nano Lett. 2021. PMID: 34164985

5

Low-Temperature 2D/2D Ohmic Contacts in WSe₂ Field-Effect Transistors as a Platform for the 2D Metal-Insulator Transition.

Stanley LJ, Chuang HJ, Zhou Z, Koehler MR, Yan J, Mandrus DG, Popović D. Stanley LJ, et al. Among authors: koehler mr. ACS Appl Mater Interfaces. 2021 Mar 3;13(8):10594-10602. doi: 10.1021/acsami.0c21440. Epub 2021 Feb 22. ACS Appl Mater Interfaces. 2021. PMID: 33617715

6

Localized interlayer excitons in MoSe₂-WSe₂ heterostructures without a moiré potential.

Mahdikhanysarvejahany F, Shanks DN, Klein M, Wang Q, Koehler MR, Mandrus DG, Taniguchi T, Watanabe K, Monti OLA, LeRoy BJ, Schaibley JR. Mahdikhanysarvejahany F, et al. Among authors: koehler mr. Nat Commun. 2022 Sep 12;13(1):5354. doi: 10.1038/s41467-022-33082-6. Nat Commun. 2022. PMID: 36097165 Free PMC article.

7

Atmospheric and Long-term Aging Effects on the Electrical Properties of Variable Thickness WSe₂ Transistors.

Hoffman AN, Stanford MG, Zhang C, Ivanov IN, Oyedele AD, Sales MG, McDonnell SJ, Koehler MR, Mandrus DG, Liang L, Sumpter BG, Xiao K, Rack PD. Hoffman AN, et al. Among authors: koehler mr. ACS Appl Mater Interfaces. 2018 Oct 24;10(42):36540-36548. doi: 10.1021/acsami.8b12545. Epub 2018 Oct 11. ACS Appl Mater Interfaces. 2018. PMID: 30256093

8

Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: enabling nanoscale direct write homo-junctions.

Stanford MG, Pudasaini PR, Belianinov A, Cross N, Noh JH, Koehler MR, Mandrus DG, Duscher G, Rondinone AJ, Ivanov IN, Ward TZ, Rack PD. Stanford MG, et al. Among authors: koehler mr. Sci Rep. 2016 Jun 6;6:27276. doi: 10.1038/srep27276. Sci Rep. 2016. PMID: 27263472 Free PMC article.

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