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Page 1
Reliability of Miniaturized Transistors from the Perspective of Single-Defects.
Micromachines (Basel). 2020 Jul 29;11(8):736. doi: 10.3390/mi11080736.
Micromachines (Basel). 2020.
PMID: 32751280
Free PMC article.
Review.
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?
Waltl M, Knobloch T, Tselios K, Filipovic L, Stampfer B, Hernandez Y, Waldhör D, Illarionov Y, Kaczer B, Grasser T.
Waltl M, et al.
Adv Mater. 2022 Dec;34(48):e2201082. doi: 10.1002/adma.202201082. Epub 2022 Apr 10.
Adv Mater. 2022.
PMID: 35318749
Review.
Item in Clipboard
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning.
Knobloch T, Uzlu B, Illarionov YY, Wang Z, Otto M, Filipovic L, Waltl M, Neumaier D, Lemme MC, Grasser T.
Knobloch T, et al. Among authors: waltl m.
Nat Electron. 2022;5(6):356-366. doi: 10.1038/s41928-022-00768-0. Epub 2022 Jun 2.
Nat Electron. 2022.
PMID: 35783488
Free PMC article.
Item in Clipboard
Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si3N4).
Wilhelmer C, Waldhoer D, Cvitkovich L, Milardovich D, Waltl M, Grasser T.
Wilhelmer C, et al. Among authors: waltl m.
Nanomaterials (Basel). 2023 Aug 9;13(16):2286. doi: 10.3390/nano13162286.
Nanomaterials (Basel). 2023.
PMID: 37630870
Free PMC article.
Item in Clipboard
Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors.
Stampfer B, Zhang F, Illarionov YY, Knobloch T, Wu P, Waltl M, Grill A, Appenzeller J, Grasser T.
Stampfer B, et al. Among authors: waltl m.
ACS Nano. 2018 Jun 26;12(6):5368-5375. doi: 10.1021/acsnano.8b00268. Epub 2018 Jun 12.
ACS Nano. 2018.
PMID: 29878746
Item in Clipboard
Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors.
Stampfer B, Schanovsky F, Grasser T, Waltl M.
Stampfer B, et al. Among authors: waltl m.
Micromachines (Basel). 2020 Apr 23;11(4):446. doi: 10.3390/mi11040446.
Micromachines (Basel). 2020.
PMID: 32340395
Free PMC article.
Item in Clipboard
Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors.
Illarionov YY, Waltl M, Rzepa G, Kim JS, Kim S, Dodabalapur A, Akinwande D, Grasser T.
Illarionov YY, et al. Among authors: waltl m.
ACS Nano. 2016 Oct 25;10(10):9543-9549. doi: 10.1021/acsnano.6b04814. Epub 2016 Oct 7.
ACS Nano. 2016.
PMID: 27704779
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