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Year Number of Results
2012 1
2014 1
2017 1
2018 1
2019 1
2020 3
2021 1
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2023 3
2024 0

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Page 1
The future transistors.
Cao W, Bu H, Vinet M, Cao M, Takagi S, Hwang S, Ghani T, Banerjee K. Cao W, et al. Among authors: vinet m. Nature. 2023 Aug;620(7974):501-515. doi: 10.1038/s41586-023-06145-x. Epub 2023 Aug 16. Nature. 2023. PMID: 37587295 Review.
Publisher Correction: The future transistors.
Cao W, Bu H, Vinet M, Cao M, Takagi S, Hwang S, Ghani T, Banerjee K. Cao W, et al. Among authors: vinet m. Nature. 2023 Sep;621(7979):E43. doi: 10.1038/s41586-023-06576-6. Nature. 2023. PMID: 37670156 No abstract available.
Parametric Amplifiers Based on Quantum Dots.
Cochrane L, Lundberg T, Ibberson DJ, Ibberson LA, Hutin L, Bertrand B, Stelmashenko N, Robinson JWA, Vinet M, Seshia AA, Gonzalez-Zalba MF. Cochrane L, et al. Among authors: vinet m. Phys Rev Lett. 2022 May 13;128(19):197701. doi: 10.1103/PhysRevLett.128.197701. Phys Rev Lett. 2022. PMID: 35622052
Strong coupling between a photon and a hole spin in silicon.
Yu CX, Zihlmann S, Abadillo-Uriel JC, Michal VP, Rambal N, Niebojewski H, Bedecarrats T, Vinet M, Dumur É, Filippone M, Bertrand B, De Franceschi S, Niquet YM, Maurand R. Yu CX, et al. Among authors: vinet m. Nat Nanotechnol. 2023 Jul;18(7):741-746. doi: 10.1038/s41565-023-01332-3. Epub 2023 Mar 6. Nat Nanotechnol. 2023. PMID: 36879125
Remote Capacitive Sensing in Two-Dimensional Quantum-Dot Arrays.
Duan J, Fogarty MA, Williams J, Hutin L, Vinet M, Morton JJL. Duan J, et al. Among authors: vinet m. Nano Lett. 2020 Oct 14;20(10):7123-7128. doi: 10.1021/acs.nanolett.0c02393. Epub 2020 Oct 5. Nano Lett. 2020. PMID: 32946244
Gate-based high fidelity spin readout in a CMOS device.
Urdampilleta M, Niegemann DJ, Chanrion E, Jadot B, Spence C, Mortemousque PA, Bäuerle C, Hutin L, Bertrand B, Barraud S, Maurand R, Sanquer M, Jehl X, De Franceschi S, Vinet M, Meunier T. Urdampilleta M, et al. Among authors: vinet m. Nat Nanotechnol. 2019 Aug;14(8):737-741. doi: 10.1038/s41565-019-0443-9. Epub 2019 May 13. Nat Nanotechnol. 2019. PMID: 31086305
Few electron limit of n-type metal oxide semiconductor single electron transistors.
Prati E, De Michielis M, Belli M, Cocco S, Fanciulli M, Kotekar-Patil D, Ruoff M, Kern DP, Wharam DA, Verduijn J, Tettamanzi GC, Rogge S, Roche B, Wacquez R, Jehl X, Vinet M, Sanquer M. Prati E, et al. Among authors: vinet m. Nanotechnology. 2012 Jun 1;23(21):215204. doi: 10.1088/0957-4484/23/21/215204. Nanotechnology. 2012. PMID: 22552118
13 results