Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography. Materials 2021, 14, 5472

Materials (Basel). 2021 Nov 18;14(22):6969. doi: 10.3390/ma14226969.

Abstract

The Materials Editorial Office would like to make the following change to this paper [...].

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  • Published Erratum