Correction: Kirste et al. Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography.
Materials
2021,
14
, 5472
Materials (Basel)
.
2021 Nov 18;14(22):6969.
doi: 10.3390/ma14226969.
Author
Materials Editorial Office
1
Affiliation
1
MDPI AG, St. Alban-Anlage 66, 4052 Basel, Switzerland.
PMID:
34832506
PMCID:
PMC8618250
DOI:
10.3390/ma14226969
Abstract
The Materials Editorial Office would like to make the following change to this paper [...].
Publication types
Published Erratum