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AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts.
Micromachines (Basel). 2018 Oct 25;9(11):546. doi: 10.3390/mi9110546.
Micromachines (Basel). 2018.
PMID: 30715045
Free PMC article.
Selective area formation of GaN nanowires on GaN substrates by the use of amorphous Al x O y nucleation layer.
Sobanska M, Zytkiewicz ZR, Klosek K, Kruszka R, Golaszewska K, Ekielski M, Gieraltowska S.
Sobanska M, et al. Among authors: ekielski m.
Nanotechnology. 2020 May 1;31(18):184001. doi: 10.1088/1361-6528/ab6bf2. Epub 2020 Jan 15.
Nanotechnology. 2020.
PMID: 31940593
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