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Gate-based high fidelity spin readout in a CMOS device.
Urdampilleta M, Niegemann DJ, Chanrion E, Jadot B, Spence C, Mortemousque PA, Bäuerle C, Hutin L, Bertrand B, Barraud S, Maurand R, Sanquer M, Jehl X, De Franceschi S, Vinet M, Meunier T. Urdampilleta M, et al. Among authors: sanquer m. Nat Nanotechnol. 2019 Aug;14(8):737-741. doi: 10.1038/s41565-019-0443-9. Epub 2019 May 13. Nat Nanotechnol. 2019. PMID: 31086305
Few electron limit of n-type metal oxide semiconductor single electron transistors.
Prati E, De Michielis M, Belli M, Cocco S, Fanciulli M, Kotekar-Patil D, Ruoff M, Kern DP, Wharam DA, Verduijn J, Tettamanzi GC, Rogge S, Roche B, Wacquez R, Jehl X, Vinet M, Sanquer M. Prati E, et al. Among authors: sanquer m. Nanotechnology. 2012 Jun 1;23(21):215204. doi: 10.1088/0957-4484/23/21/215204. Nanotechnology. 2012. PMID: 22552118
Pseudogap in a thin film of a conventional superconductor.
Sacépé B, Chapelier C, Baturina TI, Vinokur VM, Baklanov MR, Sanquer M. Sacépé B, et al. Among authors: sanquer m. Nat Commun. 2010;1:140. doi: 10.1038/ncomms1140. Nat Commun. 2010. PMID: 21266990 Free article.
Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits.
Crippa A, Maurand R, Bourdet L, Kotekar-Patil D, Amisse A, Jehl X, Sanquer M, Laviéville R, Bohuslavskyi H, Hutin L, Barraud S, Vinet M, Niquet YM, De Franceschi S. Crippa A, et al. Among authors: sanquer m. Phys Rev Lett. 2018 Mar 30;120(13):137702. doi: 10.1103/PhysRevLett.120.137702. Phys Rev Lett. 2018. PMID: 29694195