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molin pan
(6 results)?
A Low-Code Framework for Complex Crowdsourcing Work Based on Process Modeling.
Comput Intell Neurosci. 2022 Apr 29;2022:9496741. doi: 10.1155/2022/9496741. eCollection 2022.
Comput Intell Neurosci. 2022.
PMID: 35528365
Free PMC article.
QRS Detection Based on Improved Adaptive Threshold.
Lu X, Pan M, Yu Y.
Lu X, et al. Among authors: pan m.
J Healthc Eng. 2018 Mar 15;2018:5694595. doi: 10.1155/2018/5694595. eCollection 2018.
J Healthc Eng. 2018.
PMID: 29736232
Free PMC article.
Item in Clipboard
Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication.
Zhang P, Wang L, Zhu K, Wang Q, Pan M, Huang Z, Yang Y, Xie X, Huang H, Hu X, Xu S, Xu M, Wang C, Wu C, Zhang DW.
Zhang P, et al. Among authors: pan m.
Micromachines (Basel). 2023 Jul 29;14(8):1523. doi: 10.3390/mi14081523.
Micromachines (Basel). 2023.
PMID: 37630059
Free PMC article.
Item in Clipboard
High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application.
Zhang P, Wang L, Zhu K, Yang Y, Fan R, Pan M, Xu S, Xu M, Wang C, Wu C, Zhang DW.
Zhang P, et al. Among authors: pan m.
Micromachines (Basel). 2022 Apr 9;13(4):589. doi: 10.3390/mi13040589.
Micromachines (Basel). 2022.
PMID: 35457894
Free PMC article.
Item in Clipboard
In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication.
Yang Y, Fan R, Zhang P, Wang L, Pan M, Wang Q, Xie X, Xu S, Wang C, Wu C, Xu M, Jin J, Zhang DW.
Yang Y, et al. Among authors: pan m.
Micromachines (Basel). 2023 Jun 21;14(7):1278. doi: 10.3390/mi14071278.
Micromachines (Basel). 2023.
PMID: 37512589
Free PMC article.
Item in Clipboard
Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment.
Xie X, Wang Q, Pan M, Zhang P, Wang L, Yang Y, Huang H, Hu X, Xu M.
Xie X, et al. Among authors: pan m.
Nanomaterials (Basel). 2024 Mar 14;14(6):523. doi: 10.3390/nano14060523.
Nanomaterials (Basel). 2024.
PMID: 38535670
Free PMC article.
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A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication.
Wang L, Zhang P, Zhu K, Wang Q, Pan M, Sun X, Huang Z, Chen K, Yang Y, Xie X, Huang H, Hu X, Xu S, Wu C, Wang C, Xu M, Zhang DW.
Wang L, et al. Among authors: pan m.
Nanomaterials (Basel). 2023 Aug 8;13(16):2275. doi: 10.3390/nano13162275.
Nanomaterials (Basel). 2023.
PMID: 37630860
Free PMC article.
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