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1.54 μm photoluminescence from Er:Ox centers at extremely low concentration in silicon at 300 K.
Opt Lett. 2017 Sep 1;42(17):3311-3314. doi: 10.1364/OL.42.003311.
Opt Lett. 2017.
PMID: 28957091
Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength.
Celebrano M, Ghirardini L, Finazzi M, Ferrari G, Chiba Y, Abdelghafar A, Yano M, Shinada T, Tanii T, Prati E.
Celebrano M, et al. Among authors: yano m.
Nanomaterials (Basel). 2019 Mar 11;9(3):416. doi: 10.3390/nano9030416.
Nanomaterials (Basel). 2019.
PMID: 30862111
Free PMC article.
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