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Page 1
Enriching the Deep-Red Emission in (Mg, Ba)(3)M(2)GeO(8): Mn(4+) (M = Al, Ga) Compositions for Light-Emitting Diodes.
Kurunthatil Kuttiat T, Abraham M, Kunti AK, Amador-Mendez N, Tchernycheva M, Das S. Kurunthatil Kuttiat T, et al. ACS Appl Mater Interfaces. 2023 Feb 8;15(5):7083-7101. doi: 10.1021/acsami.2c20066. Epub 2023 Jan 26. ACS Appl Mater Interfaces. 2023. PMID: 36700535
Aiming at this fact, a series of new crystallographic site modified (Mg, Ba)(3)M(2)GeO(8): Mn(4+) (M = Al, Ga) compositions were developed with strong deep-red emission in the reaction to UV and blue lights. ...Further, these sites reduced the natural reduction prob …
Aiming at this fact, a series of new crystallographic site modified (Mg, Ba)(3)M(2)GeO(8): Mn(4+) (M = Al, Ga) compositions we …
Excitonic Diffusion in InGaN/GaN Core-Shell Nanowires.
Shahmohammadi M, Ganière JD, Zhang H, Ciechonski R, Vescovi G, Kryliouk O, Tchernycheva M, Jacopin G. Shahmohammadi M, et al. Nano Lett. 2016 Jan 13;16(1):243-9. doi: 10.1021/acs.nanolett.5b03611. Epub 2015 Dec 24. Nano Lett. 2016. PMID: 26674850
Our results therefore confirm the potential of core-shell nanowires for lighting devices. Indeed, the short lifetime of m-plane quantum wells together with their large active area and the homogeneous distribution of carrier along the quantum well will decrease influence of …
Our results therefore confirm the potential of core-shell nanowires for lighting devices. Indeed, the short lifetime of m-plane quant …
Investigation of Photovoltaic Properties of Single Core-Shell GaN/InGaN Wires.
Messanvi A, Zhang H, Neplokh V, Julien FH, Bayle F, Foldyna M, Bougerol C, Gautier E, Babichev A, Durand C, Eymery J, Tchernycheva M. Messanvi A, et al. ACS Appl Mater Interfaces. 2015 Oct 7;7(39):21898-906. doi: 10.1021/acsami.5b06473. Epub 2015 Sep 28. ACS Appl Mater Interfaces. 2015. PMID: 26378593
We report the investigation of the photovoltaic properties of core-shell GaN/InGaN wires. The radial structure is grown on m-plane {1100} facets of self-assembled c-axis GaN wires elaborated by metal-organic vapor phase epitaxy (MOVPE) on sapphire substrates. ...
We report the investigation of the photovoltaic properties of core-shell GaN/InGaN wires. The radial structure is grown on m-plane {1 …
Fabrication and electrical study of large area free-standing membrane with embedded GaP NWs for flexible devices.
Kochetkov FM, Neplokh V, Fedorov VV, Bolshakov AD, Sharov VA, Eliseev IE, Tchernycheva M, Cirlin GE, Nasibulin AG, Islamova RM, Mukhin IS. Kochetkov FM, et al. Nanotechnology. 2020 Nov 13;31(46):46LT01. doi: 10.1088/1361-6528/abae98. Nanotechnology. 2020. PMID: 32877371
Large scale modified silicone-embedded n-GaP nanowire arrays of a record 6 m thin membranes were studied. A homogeneous silicone encapsulation was enabled by G-coating using a heavy-load centrifuge. ...
Large scale modified silicone-embedded n-GaP nanowire arrays of a record 6 m thin membranes were studied. A homogeneous silicone enca …
InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact.
Tchernycheva M, Lavenus P, Zhang H, Babichev AV, Jacopin G, Shahmohammadi M, Julien FH, Ciechonski R, Vescovi G, Kryliouk O. Tchernycheva M, et al. Nano Lett. 2014 May 14;14(5):2456-65. doi: 10.1021/nl5001295. Epub 2014 Apr 23. Nano Lett. 2014. PMID: 24742151
High-resolution cathodoluminescence on cleaved nanowires allows the location with high precision of the origin of different emitted wavelengths and demonstrates that the blue peak originates from the emission of the radial quantum well on the m-planes, whereas the green pe …
High-resolution cathodoluminescence on cleaved nanowires allows the location with high precision of the origin of different emitted waveleng …
Color control of nanowire InGaN/GaN light emitting diodes by post-growth treatment.
Zhang H, Jacopin G, Neplokh V, Largeau L, Julien FH, Kryliouk O, Tchernycheva M. Zhang H, et al. Nanotechnology. 2015 Nov 20;26(46):465203. doi: 10.1088/0957-4484/26/46/465203. Epub 2015 Oct 28. Nanotechnology. 2015. PMID: 26508299
The electroluminescence spectra present two peaks corresponding to the m-plane InGaN quantum well (blue emission) and to an In-rich region at the m-plane-semipolar plane junction (green emission), in agreement with structural characterizations. ...Inductively couple …
The electroluminescence spectra present two peaks corresponding to the m-plane InGaN quantum well (blue emission) and to an In-rich r …
Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wells.
Lupu A, Tchernycheva M, Kotsar Y, Monroy E, Julien FH. Lupu A, et al. Opt Express. 2012 May 21;20(11):12541-9. doi: 10.1364/OE.20.012541. Opt Express. 2012. PMID: 22714242 Free article.
The aim of the present paper was to determine the index variation in the GaN/AlN heterostructures related to the population/depletion of the quantum well fundamental state leading to the absorption variation in the spectral domain around 1.5 m. The variation of the refract …
The aim of the present paper was to determine the index variation in the GaN/AlN heterostructures related to the population/depletion of the …
Self-assembled GaN quantum wires on GaN/AlN nanowire templates.
Arbiol J, Magen C, Becker P, Jacopin G, Chernikov A, Schäfer S, Furtmayr F, Tchernycheva M, Rigutti L, Teubert J, Chatterjee S, Morante JR, Eickhoff M. Arbiol J, et al. Nanoscale. 2012 Dec 7;4(23):7517-24. doi: 10.1039/c2nr32173d. Nanoscale. 2012. PMID: 23100169
The GaN QWRs are formed by selective nucleation on {112[combining macron]0} (a-plane) facets formed at the six intersections of {11[combining macron]00} (m-plane) sidewalls of AlN/GaN nanowires used as a template. Based on microscopy observations we have developed a 3D mod …
The GaN QWRs are formed by selective nucleation on {112[combining macron]0} (a-plane) facets formed at the six intersections of {11[combinin …
Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping.
Tchernycheva M, Neplokh V, Zhang H, Lavenus P, Rigutti L, Bayle F, Julien FH, Babichev A, Jacopin G, Largeau L, Ciechonski R, Vescovi G, Kryliouk O. Tchernycheva M, et al. Nanoscale. 2015 Jul 21;7(27):11692-701. doi: 10.1039/c5nr00623f. Epub 2015 Jun 23. Nanoscale. 2015. PMID: 26100114
In particular, the electrical activity of the p-n junction on the m-planes and on the semi-polar planes of individual nanowires is assessed in top view and cross-sectional geometries. ...
In particular, the electrical activity of the p-n junction on the m-planes and on the semi-polar planes of individual nanowires is as …