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Table representation of search results timeline featuring number of search results per year.
Year | Number of Results |
---|---|
2011 | 2 |
2015 | 1 |
2021 | 1 |
2024 | 0 |
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Page 1
Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes.
Materials (Basel). 2011 Dec 6;4(12):2092-2107. doi: 10.3390/ma4122092.
Materials (Basel). 2011.
PMID: 28824126
Free PMC article.
On the Many Applications of Nanometer-Thin Pure Boron Layers in IC and Microelectromechanical Systems Technology.
Nanver LK, Knezevic T, Liu X, Thammaiah SD, Krakers M.
Nanver LK, et al.
J Nanosci Nanotechnol. 2021 Apr 1;21(4):2472-2482. doi: 10.1166/jnn.2021.19112.
J Nanosci Nanotechnol. 2021.
PMID: 33500065
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PureB single-photon avalanche diodes for low-energy electron detection down to 200 eV.
Qi L, Sluyterman S, Kooijman K, Mok KR, Nanver LK.
Qi L, et al. Among authors: nanver lk.
Opt Lett. 2015 Feb 1;40(3):300-3. doi: 10.1364/OL.40.000300.
Opt Lett. 2015.
PMID: 25680032
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X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor.
Hrauda N, Zhang J, Wintersberger E, Etzelstorfer T, Mandl B, Stangl J, Carbone D, Holý V, Jovanović V, Biasotto C, Nanver LK, Moers J, Grützmacher D, Bauer G.
Hrauda N, et al. Among authors: nanver lk.
Nano Lett. 2011 Jul 13;11(7):2875-80. doi: 10.1021/nl2013289. Epub 2011 May 31.
Nano Lett. 2011.
PMID: 21627099
Free PMC article.
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