Selective Deposition of Multiple Sensing Materials on Si Nanobelt Devices through Plasma-Enhanced Chemical Vapor Deposition and Device-Localized Joule Heating

Ru-Zheng Lin; Kuang-Yang Cheng; Fu-Ming Pan; Jeng-Tzong Sheu

doi:10.1021/acsami.7b13896

Selective Deposition of Multiple Sensing Materials on Si Nanobelt Devices through Plasma-Enhanced Chemical Vapor Deposition and Device-Localized Joule Heating

ACS Appl Mater Interfaces. 2017 Nov 22;9(46):39935-39939. doi: 10.1021/acsami.7b13896. Epub 2017 Nov 9.

Authors

Ru-Zheng Lin¹, Kuang-Yang Cheng², Fu-Ming Pan¹, Jeng-Tzong Sheu²

Affiliations

¹ Graduate Program for Nanotechnology/Department of Materials Science and Engineering, National Chiao Tung University , 1001 Ta-Hsueh Road, Hsinchu 30050, Taiwan.
² *Institute of Biomedical Engineering, College of Electrical and Computer Engineering, National Chiao Tung University , 1001 Ta-Hsueh Road, Hsinchu 30050, Taiwan.

PMID: 29112364
DOI: 10.1021/acsami.7b13896

Abstract

This paper describes a novel method, using device-localized Joule heating (JH) in a plasma enhanced atomic layer deposition (PEALD) system, for the selective deposition of platinum (Pt) and zinc oxide (ZnO) in the n^- regions of n⁺/n^-/n⁺ polysilicon nanobelts (SNBs). COMSOL simulations were adopted to estimate device temperature distribution. However, during ALD process, the resistance of SNB device decreased gradually and reached to minima after 20 min JH. As a result, thermal decomposition of precursors occurred during PEALD process. Selective deposition in the n^- region was dominated by CVD instead of ALD. Selective deposition of Pt and ZnO films has been achieved and characterized using atomic force microscopy, scanning electron microscopy, and transmission electron microscopy.

Keywords: localized Joule heating; plasma-enhanced atomic layer deposition; plasma-enhanced chemical vapor deposition; selective deposition; silicon nanobelt.