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Year | Number of Results |
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2017 | 3 |
2018 | 2 |
2021 | 1 |
2024 | 0 |
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Page 1
High-power narrow spectrum GaSb-based DBR lasers emitting near 2.1 µm.
Opt Lett. 2021 Apr 15;46(8):1967-1970. doi: 10.1364/OL.422536.
Opt Lett. 2021.
PMID: 33857118
Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 3.22 μm.
Feng T, Hosoda T, Shterengas L, Kipshidze G, Stein A, Lu M, Belenky G.
Feng T, et al. Among authors: shterengas l.
Appl Opt. 2017 Nov 1;56(31):H74-H80. doi: 10.1364/AO.56.000H74.
Appl Opt. 2017.
PMID: 29091669
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Engineering Dirac Materials: Metamorphic InAs1-xSbx/InAs1-ySby Superlattices with Ultralow Bandgap.
Suchalkin S, Belenky G, Ermolaev M, Moon S, Jiang Y, Graf D, Smirnov D, Laikhtman B, Shterengas L, Kipshidze G, Svensson SP, Sarney WL.
Suchalkin S, et al. Among authors: shterengas l.
Nano Lett. 2018 Jan 10;18(1):412-417. doi: 10.1021/acs.nanolett.7b04304. Epub 2017 Dec 28.
Nano Lett. 2018.
PMID: 29266950
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Materials design parameters for infrared device applications based on III-V semiconductors.
Svensson SP, Sarney WL, Donetsky D, Kipshidze G, Lin Y, Shterengas L, Xu Y, Belenky G.
Svensson SP, et al. Among authors: shterengas l.
Appl Opt. 2017 Jan 20;56(3):B58-B63. doi: 10.1364/AO.56.000B58.
Appl Opt. 2017.
PMID: 28157865
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External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm.
Wang M, Hosoda T, Jiang J, Shterengas L, Kipshidze G, Stein A, Feng T, Belenky G.
Wang M, et al. Among authors: shterengas l.
Opt Lett. 2018 Sep 15;43(18):4473-4476. doi: 10.1364/OL.43.004473.
Opt Lett. 2018.
PMID: 30211893
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