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lai sheng feng
(15 results)?
Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design.
Sci Rep. 2021 Apr 23;11(1):8877. doi: 10.1038/s41598-021-87554-8.
Sci Rep. 2021.
PMID: 33893341
Free PMC article.
Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure.
Zhao Y, Xu S, Tao H, Zhang Y, Zhang C, Feng L, Peng R, Fan X, Du J, Zhang J, Hao Y.
Zhao Y, et al. Among authors: feng l.
Materials (Basel). 2020 Dec 31;14(1):144. doi: 10.3390/ma14010144.
Materials (Basel). 2020.
PMID: 33396218
Free PMC article.
Item in Clipboard
Gas-Phase Chemical Reaction Mechanism in the Growth of AlN during High-Temperature MOCVD: A Thermodynamic Study.
An J, Dai X, Zhang Q, Guo R, Feng L.
An J, et al. Among authors: feng l.
ACS Omega. 2020 May 12;5(20):11792-11798. doi: 10.1021/acsomega.0c01180. eCollection 2020 May 26.
ACS Omega. 2020.
PMID: 32478270
Free PMC article.
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Ab initio study for molecular-scale adsorption, decomposition and desorption on AlN surfaces during MOCVD growth.
An J, Dai X, Guo R, Feng L, Zhao T.
An J, et al. Among authors: feng l.
Sci Rep. 2020 Oct 20;10(1):17840. doi: 10.1038/s41598-020-72973-w.
Sci Rep. 2020.
PMID: 33082396
Free PMC article.
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