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Page 1
Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor.
Micromachines (Basel). 2022 Sep 19;13(9):1554. doi: 10.3390/mi13091554.
Micromachines (Basel). 2022.
PMID: 36144177
Free PMC article.
The Possible Mechanism of Advanced Glycation End Products (AGEs) for Alzheimer's Disease.
Ko SY, Ko HA, Chu KH, Shieh TM, Chi TC, Chen HI, Chang WC, Chang SS.
Ko SY, et al. Among authors: chu kh.
PLoS One. 2015 Nov 20;10(11):e0143345. doi: 10.1371/journal.pone.0143345. eCollection 2015.
PLoS One. 2015.
PMID: 26587989
Free PMC article.
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AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition.
Tzou AJ, Chu KH, Lin IF, Østreng E, Fang YS, Wu XP, Wu BW, Shen CH, Shieh JM, Yeh WK, Chang CY, Kuo HC.
Tzou AJ, et al. Among authors: chu kh.
Nanoscale Res Lett. 2017 Dec;12(1):315. doi: 10.1186/s11671-017-2082-0. Epub 2017 Apr 27.
Nanoscale Res Lett. 2017.
PMID: 28454481
Free PMC article.
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