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2012 | 1 |
2020 | 1 |
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Page 1
Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing.
Materials (Basel). 2020 Mar 20;13(6):1408. doi: 10.3390/ma13061408.
Materials (Basel). 2020.
PMID: 32244923
Free PMC article.
Crystal Lattice Defects in Deuterated Zr in Presence of O and C Impurities Studied by PAS and XRD for Electron Screening Effect.
Kowalska A, Czerski K, Horodek P, Siemek K, Kaczmarski M, Targosz-Ślęczka N, Valat M, Dubey R, Pyszniak K, Turek M, Droździel A, Słowik J, Baranowska J.
Kowalska A, et al. Among authors: pyszniak k.
Materials (Basel). 2023 Sep 18;16(18):6255. doi: 10.3390/ma16186255.
Materials (Basel). 2023.
PMID: 37763533
Free PMC article.
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InP nanocrystals on silicon for optoelectronic applications.
Prucnal S, Zhou S, Ou X, Reuther H, Liedke MO, Mücklich A, Helm M, Zuk J, Turek M, Pyszniak K, Skorupa W.
Prucnal S, et al. Among authors: pyszniak k.
Nanotechnology. 2012 Dec 7;23(48):485204. doi: 10.1088/0957-4484/23/48/485204. Epub 2012 Nov 9.
Nanotechnology. 2012.
PMID: 23138269
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